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Van der Waals (vdW) moirés offer tunable superlattices that can strongly manipulate electronic properties. We demonstrate the in situ manipulation of moiré superlattices via heterostrain control in a vdW device. By straining a graphene layer relative to its hexagonal boron nitride substrate, we modify the shape and size of the moiré. Our sliding-based technique achieves uniaxial heterostrain values exceeding 1%, resulting in distorted moirés values that are larger than those achievable without strain. The stretched moiré is evident in transport measurements, resulting in shifted superlattice resistance peaks and Landau fans, consistent with an enlarged superlattice unit cell. Electronic structure calculations reveal how heterostrain shrinks and distorts the moiré Brillouin zone, resulting in a reduced electronic bandwidth as well as the appearance of highly anisotropic and quasi-one-dimensional Fermi surfaces. Our heterostrain control approach opens a wide parameter space of moiré lattices to explore beyond what is possible by twist angle control alone. 

Abstract In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under these conditions, the electronic system can efficiently amplify acoustic phonons, leading to an exponential growth of sound waves in the direction of the carrier flow. Here, we show that such phonon amplification can significantly modify the electrical properties of graphene devices. We observe a superlinear growth of the resistivity in the direction of the carrier flow when the drift velocity exceeds the speed of sound — resulting in a sevenfold increase over a distance of 8 µm. The resistivity growth is observed at carrier densities away from the Dirac point and is enhanced at cryogenic temperatures. We develop a theoretical model for the resistivity growth due to the electrical amplification of acoustic phonons — reaching frequencies up to 2.2 THz — where the wavelength is controlled by gate-tunable transitions across the Fermi surface. These findings provide a route to on-chip high-frequency sound generation and detection in the THz frequency range. 

Confining materials to two-dimensional forms changes the behaviour of the electrons and enables the creation of new devices. However, most materials are challenging to produce as uniform, thin crystals. Here we present a synthesis approach where thin crystals are grown in a nanoscale mould defined by atomically flat van der Waals (vdW) materials. By heating and compressing bismuth in a vdW mould made of hexagonal boron nitride, we grow ultraflat bismuth crystals less than 10 nm thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-moulded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov–de Haas quantum oscillations originating from the (111) surface state Landau levels. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW mould growth technique establishes a platform for electronic studies and control of bismuth’s Rashba surface states and topological boundary modes1,2,3. Beyond bismuth, the vdW-moulding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure. 

Interfaces of van der Waals (vdW) materials, such as graphite and hexagonal boron nitride (hBN), exhibit low-friction sliding due to their atomically flat surfaces and weak vdW bonding. We demonstrate that microfabricated gold also slides with low friction on hBN. This enables the arbitrary post-fabrication repositioning of device features both at ambient conditions and in situ to a measurement cryostat. We demonstrate mechanically reconfigurable vdW devices where device geometry and position are continuously tunable parameters. By fabricating slidable top gates on a graphene-hBN device, we produce a mechanically tunable quantum point contact where electron confinement and edge-state coupling can be continuously modified. Moreover, we combine in situ sliding with simultaneous electronic measurements to create new types of scanning probe experiments, where gate electrodes and even entire vdW heterostructure devices can be spatially scanned by sliding across a target. 

Abstract The fine-tuning of topologically protected states in quantum materials holds great promise for novel electronic devices. However, there are limited methods that allow for the controlled and efficient modulation of the crystal lattice while simultaneously monitoring the changes in the electronic structure within a single sample. Here, we apply significant and controllable strain to high-quality HfTe₅samples and perform electrical transport measurements to reveal the topological phase transition from a weak topological insulator phase to a strong topological insulator phase. After applying high strain to HfTe₅and converting it into a strong topological insulator, we found that the resistivity of the sample increased by 190,500% and that the electronic transport was dominated by the topological surface states at cryogenic temperatures. Our results demonstrate the suitability of HfTe₅as a material for engineering topological properties, with the potential to generalize this approach to study topological phase transitions in van der Waals materials and heterostructures. 

Understanding and controlling nonequilibrium electronic phenomena is an outstanding challenge in science and engineering. By electrically driving ultraclean graphene devices out of equilibrium, we observe an instability that is manifested as substantially enhanced current fluctuations and suppressed conductivity at microwave frequencies. Spatial mapping of the nonequilibrium current fluctuations using nanoscale magnetic field sensors reveals that the fluctuations grow exponentially along the direction of carrier flow. Our observations, including the dependence on density and temperature, are consistently explained by the emergence of an electron-phonon Cerenkov instability at supersonic drift velocities. These results offer the opportunity for tunable terahertz generation and active phononic devices based on two-dimensional materials.